Theoretical investigation of hydrogen chemisorption on Ga-containing III–V compounds
- 1 July 1982
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science and Technology
- Vol. 21 (2) , 371-374
- https://doi.org/10.1116/1.571783
Abstract
A fully self-consistent pseudopotential calculation of the electronic properties of atomic hydrogen chemisorbed on GaAs and GaP(110) surfaces is reported. Different chemisorption geometries and substrate coverages are considered. The results are compared with the experimental information to select a structural model.Keywords
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