The characterization of distortions in heteroepitaxial structures by X‐ray multiple diffraction
- 1 March 1980
- journal article
- Published by Wiley in Journal of Microscopy
- Vol. 118 (3) , 375-381
- https://doi.org/10.1111/j.1365-2818.1980.tb00286.x
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Determination of the lattice constant of epitaxial layers of III-V compoundsJournal of Crystal Growth, 1978
- Asymmetry of misfit dislocations in heteroepitaxial layers on (001) GaAs substratesJournal of Crystal Growth, 1977
- Interface stress of AlxGa1−xAs–GaAs layer structuresJournal of Applied Physics, 1973
- The measurement of single-crystal lattice parameters using a double-diffraction techniqueJournal of Applied Crystallography, 1973
- The geometry of X-ray multiple diffraction in crystalsActa Crystallographica Section A, 1971