The influence of diffusion on the stability of the supercritical transferred electron amplifier

1 April 1972

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 60 (4) , 452-454
https://doi.org/10.1109/PROC.1972.8660

Abstract

The influence of the diffusion coefficient-electric field characteristic on the stability of the supercritical n-GaAs transferred electron amplifier (TEA) with ohmic contacts is investigated in computer simulations. Typical effects of doping profile, bias voltage, and temperature are considered. For a 10-µm 5-Ω TEA, a negative input conductance in the 7-31- GHz range is computed along with a corresponding 37-GHz voltage gain 3-dB bandwidth product in a 50-Ω circuit.

Keywords

STABILITY
ELECTRONS
EIGENVALUES AND EIGENFUNCTIONS
BOUNDARY CONDITIONS
ACOUSTIC WAVEGUIDES
DIFFERENTIAL EQUATIONS
MOMENT METHODS
TELLURIUM
FREQUENCY
ACCURACY

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