Flux effects on damage in GaAs as measured by the channelling of 85Kr
- 1 June 1972
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 14 (3-4) , 261-262
- https://doi.org/10.1080/00337577208231209
Abstract
(1972). Flux effects on damage in GaAs as measured by the channelling of 85Kr. Radiation Effects: Vol. 14, No. 3-4, pp. 261-262.Keywords
This publication has 2 references indexed in Scilit:
- Low temperature channeling measurements of ion implantation lattice disorder in GaAs†Radiation Effects, 1971
- The implantation profiles of 10, 20 and 40 keV 85Kr in gallium arsenideJournal of Materials Science, 1969