Notch and large-area CCD imagers
- 1 July 1991
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- Vol. 1447, 310-315
- https://doi.org/10.1117/12.45335
Abstract
A technique for improving the performance oflarge area high resolution Charge-Coupled Device (CCD) imagers will be described. Adding an additional doped channel down the center of a CCD register provides for charge confinement. This leads to improved charge transfer efficiency and resistance to radiation damage. Two dimenslonal theoretical analysis will be shown along with measured device performance.This publication has 0 references indexed in Scilit: