Iterative determination of oxide thickness in MOS structures from one DC current/voltage pair
- 19 January 1984
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 20 (2) , 70-72
- https://doi.org/10.1049/el:19840049
Abstract
A simple iterative technique which enables the silicon dioxide thickness to be determined using Fowler-Nordheim tunnelling measurements is described. It is shown that by assuming the accepted values of the Fowler-Nordheim tunnelling constants only one DC current/voltage pair is required to obtain the thickness. The thicknesses obtained in this way are shown to be in good agreement with ellipsometer and high-frequency capacitance measurements over the range 70–350 Å.Keywords
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