A 25ns 1Mb CMOS SRAM

• 1 January 1987
• conference paper
• Published by Institute of Electrical and Electronics Engineers (IEEE)
• Vol. XXX, 264-265
• https://doi.org/10.1109/isscc.1987.1157219

Abstract

Keywords

• RANDOM ACCESS MEMORY
• READ-WRITE MEMORY
• ALUMINUM
• CMOS TECHNOLOGY
• VOLTAGE
• MOSFETS
• ENERGY CONSUMPTION
• CIRCUITS
• CMOS PROCESS
• DELAY