Microwave performance of GaAs MESFET's with AlGaAs buffer layers—Effect of heterointerfaces

1 March 1984

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 5 (3) , 82-84
https://doi.org/10.1109/EDL.1984.25839

Abstract

Field-effect transistors consisting of GaAs active layers and Al0.33Ga0.67As buffer layers with abrupt, graded-bulk, and graded superlattice heterointerfaces were fabricated and compared to GaAs buffer transistors. Microwave measurements showed that a good interface is obtained in the graded superlattice interface structure and that there is a small improvement in gain (1-2 dB) over the GaAs buffer structure.

Keywords

GALLIUM ARSENIDE
MESFETS
SUPERLATTICES
BUFFER LAYERS
MICROWAVE TRANSISTORS
GAIN MEASUREMENT
LATTICES
MICROWAVE DEVICES
MOLECULAR BEAM EPITAXIAL GROWTH
SUBSTRATES

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