Transformation of simple defects in radiation converted p-Type Ge At 200°K
- 1 January 1974
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 21 (3) , 193-195
- https://doi.org/10.1080/00337577408241462
Abstract
Simple defects created by electron irradiation of n-type germanium at 85°K were studied by electrical measurements in the temperature range of 80-300°K. The annealing processes observed were found to be strongly dependent upon the electron energy. These results provide new evidence for the tentative divacancy-interstitial model of defects created which explains their temperature transformation at 200°K.Keywords
This publication has 3 references indexed in Scilit:
- Defects in germanium irradiated with 1 MeV electrons at 85°KPhysica Status Solidi (a), 1972
- Annealing of Defects Produced in-Type Ge by Electron Irradiation at 30°KPhysical Review B, 1969
- Energy, Orientation, and Temperature Dependence of Defect Formation in Electron Irradiation of n-Type GermaniumJournal of Applied Physics, 1959