PbxSn1-xTe epitaxial layers by rf multicathode sputtering
- 15 May 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 24 (10) , 484-485
- https://doi.org/10.1063/1.1655021
Abstract
Epitaxial single‐crystal PbxSn1‐xTe films with carrier concentration and mobility values close to bulk sinle crystals have been obtained by sputtering on BaF2, NaCl, and (111) Ge substrates.Keywords
This publication has 4 references indexed in Scilit:
- PbTe rf-sputtered infrared detectorsApplied Physics Letters, 1974
- Infrared detector arrays by R.F. SputteringInfrared Physics, 1972
- Photoconductivity in Epitaxial Pb1−xSnxTeJournal of Applied Physics, 1972
- Compositional Determination of rf Co-Sputtered Multicomponent SystemsJournal of Vacuum Science and Technology, 1971