Model for junction luminescence
- 30 November 1963
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 1 (6) , 151-153
- https://doi.org/10.1016/0038-1098(63)90216-3
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- EFFECT OF DOPING ON THE EMISSION PEAK AND THE ABSORPTION EDGE OF GaAsApplied Physics Letters, 1963
- Thomas-Fermi Approach to Impure Semiconductor Band StructurePhysical Review B, 1963
- Electron-Hole and Electron-Impurity Band Tunneling in GaAs Luminescent JunctionsPhysical Review Letters, 1963
- Electric Fields of Defects in SolidsPhysical Review B, 1963
- Determination of the Active Region in Light-Emitting GaAs Diodes [Letter to the Editor]IBM Journal of Research and Development, 1963
- Tunneling-Assisted Photon Emission in Gallium ArsenideJunctionsPhysical Review Letters, 1962
- Optical Absorption Edge in GaAs and Its Dependence on Electric FieldJournal of Applied Physics, 1961