1.22-μm HgCdTe/CdTe avalanche photodiodes
- 1 June 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (11) , 965-967
- https://doi.org/10.1063/1.92969
Abstract
A planar HgCdTe/CdTe avalanche photodiode with peak responsivity at 1.22 μm and cutoff at 1.25 μm has been fabricated successfully by liquid phase epitaxy (LPE). Avalanche gains of higher than 15 have been obtained with 1.06-μm Nd:yttrium aluminum garnet (YAG) laser illumination. A reverse breakdown voltage of 80 V and a leakage current density of 1×10−4 A/cm2 at 40 V were measured. The peak quantum efficiency at 1.22 μm is 72% without any antireflection coating.Keywords
This publication has 5 references indexed in Scilit:
- 1.33-μm HgCdTe/CdTe photodiodesApplied Physics Letters, 1980
- Ion Implantation Study of HgCdTeJapanese Journal of Applied Physics, 1980
- Signal Processing with Nonlinear Integrated OpticsJapanese Journal of Applied Physics, 1980
- Liquid Phase Growth of HgCdTe Epitaxial LayersJournal of the Electrochemical Society, 1980
- III-V alloy heterostructure high speed avalanche photodiodesIEEE Journal of Quantum Electronics, 1979