TCAD Evaluation of Double Implanted 4H-SiC Power Bipolar Transistors

• 10 May 2000
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 338-342, 1419-1422
• https://doi.org/10.4028/www.scientific.net/msf.338-342.1419

Abstract

Keywords

• 4H-SIC
• BIPOLAR TRANSISTOR
• SIMULATION