A new approach to active phased arrays through RF-wafer scale integration

Abstract
A novel approach to active phased array technology is described. Several modules are fabricated at the same time and placed in a layered structure. The layers include the RF modules, cooling manifold, DC bias distribution, RF manifold, and radiating elements. In this configuration, 16 or more T/R (transmit/receive) modules are fabricated on as single 3-in GaAs wafer. The realization of multiple modules on a wafer is made possible by redundancy of circuit elements and novel mechanical switches. Preliminary results on these efforts are presented.

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