D’yakonov-Shur instability in a ballistic field-effect transistor with a spatially nonuniform channel
- 1 May 1999
- journal article
- Published by Pleiades Publishing Ltd in Semiconductors
- Vol. 33 (5) , 578-585
- https://doi.org/10.1134/1.1187732
Abstract
The instability of a two-dimensional electronic liquid in the channel of a ballistic field-effect transistor is analyzed by investigating the energy balance. A criterion of instability is found for arbitrary boundary conditions. Using energy-balance analysis we propose a device with a high instability growth rate. The transistor possesses a spatially nonuniform channel and is analogous to a divergent channel in classical hydrodynamics. Our computed growth rate and threshold of the instability for this device agree with the computational data.Keywords
This publication has 7 references indexed in Scilit:
- Influence of electron scattering on current instability in field effect transistorsSolid-State Electronics, 1998
- Nonlinear theory of the current instability in a ballistic field-effect transistorPhysical Review B, 1996
- Detection of microwave radiation by electronic fluidin high electronmobility transistorsElectronics Letters, 1996
- Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluidIEEE Transactions on Electron Devices, 1996
- Choking of electron flow: A mechanism of current saturation in field-effect transistorsPhysical Review B, 1995
- Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc currentPhysical Review Letters, 1993
- Physics of Semiconductor DevicesPhysics Today, 1990