Growth of textured diamond films on foreign substrates from attached seed crystals
- 7 August 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (6) , 550-552
- https://doi.org/10.1063/1.101830
Abstract
A technique has been developed to grow (111) textured diamond films on smooth substrates using attached diamond seeds. The degree of texture is defined by the initial texture of the seeds. This initial texture depends upon the seed size and the cleaning procedure. Under the best conditions, over 90% of the seeds exhibit a (111) texture with a tip angle of less than 0.25°. Further growth of diamond on these seeds does not affect the texture, and diamond films obtained by such growth are expected to have smoother surfaces and more controlled doping than nontextured polycrystalline films.Keywords
This publication has 6 references indexed in Scilit:
- Electrical characteristics of Schottky diodes fabricated using plasma assisted chemical vapor deposited diamond filmsApplied Physics Letters, 1988
- Summary Abstract: Device applications of diamondsJournal of Vacuum Science & Technology A, 1988
- Diamond synthesis from gas phase in microwave plasmaJournal of Crystal Growth, 1983
- Vapor Deposition of Diamond Particles from MethaneJapanese Journal of Applied Physics, 1982
- Structure of autoepitaxial diamond filmsJournal of Crystal Growth, 1975
- Changes in orientation of etch pits produced on the cubic faces of diamondPhilosophical Magazine, 1972