Effect of the field dependence of the diffusion constant on small-signal behaviour of bulk negative-mobility devices

14 June 1968

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 4 (12) , 249-250
https://doi.org/10.1049/el:19680191

Abstract

Modification of the small-signal behaviour of bulk-semiconductor devices, due to the effective drift velocity resulting from the field dependence of the diffusion constant, is discussed. It is effectively less important at lower doping levels and at higher frequencies.

Keywords

FIELD DEPENDENCE
DRIFT
SEMICONDUCTOR
MOBILITY
FREQUENCIES
DOPING
DIFFUSION CONSTANT
SMALL SIGNAL
SIGNAL BEHAVIOUR
DEVICES

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