Thermal Ionization and Capture of Electrons Trapped in Semiconductors

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Abstract
The use of Coulombic wave functions rather than plane waves for the free electron states is found to increase the calculated rate of capture of electrons by a factor of about 200 at liquid helium temperatures. Results calculated for shallow traps in Ge and Si are now found to be consistent with the upper limit set on the photoconductive lifetime by the experiment of Burstein, Overly, and Davisson. The Born-Oppenheimer and Hartree approximations used in our calculations were found to yield identical results at low temperatures in these materials.