LOW FREQUENCY RAMAN SCATTERING IN MIXED Ga1-xAlxAs AND Ga1-xInxAs ALLOYS
- 1 December 1981
- journal article
- Published by EDP Sciences in Le Journal de Physique Colloques
- Vol. 42 (C6) , C6-105
- https://doi.org/10.1051/jphyscol:1981633
Abstract
We report Raman studies of disorder induced scattering in the Ga1-xAlxAs and Ga1-xInxAs alloys. Previous results [1] are confirmed for the Ga1-xAlxAs system for a wider range of concentration. The role of the substituant is discussed through the analysis of the Ga1-xInxAs systemKeywords
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