Internal quantum efficiency of back illuminated n+ pp + solar cells
- 1 January 1978
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 13 (12) , 629-632
- https://doi.org/10.1051/rphysap:019780013012062900
Abstract
A theoretical analysis of the Internal Quantum Efficiency (I.Q.E.), taking into account the generation in the p+ layer of the back illuminated n+ pp+ solar cells has been carried out, and compared to that of the structure illuminated in the conventional way. Experimental cells have been made both by ion implantation and by alloying Al-Si to form the p+ layer. Very thin cells, here reported, present excellent values up to 90 % for the back illuminated to front illuminated I.Q.E. ratioKeywords
This publication has 3 references indexed in Scilit:
- Solar cell behaviour under variable surface recombination velocity and proposal of a novel structureSolid-State Electronics, 1978
- The interdigitated back contact solar cell: A silicon solar cell for use in concentrated sunlightIEEE Transactions on Electron Devices, 1977
- Limitations and Possibilities for Improvement of Photovoltaic Solar Energy Converters: Part I: Considerations for Earth's Surface OperationProceedings of the IRE, 1960