Lasing with low threshold current and high outputpower fromcolumnar-shaped InAs/GaAs quantum dots
- 6 August 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (16) , 1588-1590
- https://doi.org/10.1049/el:19981075
Abstract
Lasers with a new type of quantum dot achieve low threshold current and high output power. By supplying a small amount of InAs and GaAs alternately on GaAs substrates, dots with high uniformity and high emission efficiency were self-assembled. The lasers exhibited a threshold current of 5.4 mA, a current density of 160 A/cm2, and an output power of 110 mW at room temperature.Keywords
This publication has 2 references indexed in Scilit:
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