On the establishment of an inversion layer in p- and n-type silicon substrates under conditions of high oxide fields
- 1 June 1977
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 30 (11) , 597-598
- https://doi.org/10.1063/1.89250
Abstract
It has been observed that an inversion layer cannot form in a p-type silicon substrate when the Fowler-Nordheim tunneling current into the oxide exceeds the minority generation current in the depletion layer. On the other hand, for n-type substrates, the formation of the inversion layer is unaffected by the oxide current.Keywords
This publication has 2 references indexed in Scilit:
- Determination of the sign of carrier transported across SiO2 films on SiApplied Physics Letters, 1974
- Fowler-Nordheim Tunneling into Thermally Grown SiO2Journal of Applied Physics, 1969