Optimum semiconductor for microwave devices
- 10 July 1969
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 5 (14) , 313-314
- https://doi.org/10.1049/el:19690238
Abstract
The best semiconductors for microwave devices, silicon and gallium arsenide, are restricted in their performance because the electron drift velocity saturates at a fairly low value. It is proposed that InAs-InP alloys should give better performance. Detailed calculations of drift velocity are made by a Monte Carlo technique, and it is shown that some alloys should give drift velocities greater than 4×107cm/s.Keywords
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