An Easy Derivation of the Hole Lifetime in an n-type Semiconductor with Acceptor Traps
- 1 November 1955
- journal article
- Published by IOP Publishing in Proceedings of the Physical Society. Section B
- Vol. 68 (11) , 894-897
- https://doi.org/10.1088/0370-1301/68/11/312
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- On the Relation between the Sum of Donor and Acceptor Concentration and Lifetime in Single Crystal GermaniumProceedings of the Physical Society. Section B, 1954
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952
- Zum Hochfrequenzverhalten der RandschichtgleichrichterThe European Physical Journal A, 1952