A Study of the Dissociation State and the SiO2 Etching Reaction for HF Solutions of Extremely Low Concentration

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Abstract
The conductivities of , , and solutions have been measured at very low concentrations. The concentration of ion, a dominant ion in the etching process, has been calculated from the measured F− concentration in and solutions. The dissociation state of in solution has been classified into three regions as a function of initial concentration. Etching caused by a high concentration of F− ions was followed along with the conductivity of solution for a thermal film. Further, with and solutions, the etching rate for a thermal film was a function of the concentration. The activation energy for the etching reaction in solution is minimal in a certain range of concentration. Conductivity measurements can be used to monitor the etching rate of in solutions very accurately when the etching rate is relatively slow (around 1 Å/min). Furthermore, the relationship between conductivity and etching rate is independent of the temperature of the solution (in the range of 24 to 45°C) when the concentration is between 0.005 and 0.04 mol/kg.

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