Spin relaxation of conduction electrons in highly doped semiconductors (InSb, Si, Ge)

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Abstract
Experimental data of the temperature and concentration dependence of the ESR line‐width in highly doped n‐InSb, Ge: As, and Si: P are compared with theoretical calculations. For the spin–phonon interaction the temperature dependence and the values of the constants obtained agree within one or two orders of magnitude with theoretical results. Only qualitative agreement has been obtained for the contribution of relaxation by ionized impurity scattering. Possible sources of the line‐broadening are discussed in the limit of low temperatures, where the linewidth does not depend on temperature.