An energy scheme for interpreting deep-level photoconductivity and other recent optical measurement for Fe-doped InP
- 27 November 1981
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 14 (33) , 5063-5068
- https://doi.org/10.1088/0022-3719/14/33/015
Abstract
Presents the low-temperature deep-level photoconductivity spectra of a wide range of n-type and semi-insulating Fe-doped InP crystals. The results differ in important respects from some recently reported photoconductivity work and conclusively demonstrate that Fe2+ rather than Fe+ is the stable charge state in n-type material. The electron ionisation threshold energy from the Fe2+ state to the lowest conduction band at 0.65 eV is found in all the samples studied. Only the semi-insulating show a strong photoconductivity threshold at 1.15 eV. This feature is absent in n-type InP(Fe). The authors tentatively assign this structure to an Fe-related level (Fe3+) 1.15 eV below the conduction band-edge.Keywords
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