Low-frequency noise measurements in GaAlAs/GaAs heterojunction bipolar transistors
- 1 January 1993
- proceedings article
- Published by AIP Publishing in AIP Conference Proceedings
- Vol. 285 (1) , 296-299
- https://doi.org/10.1063/1.44552
Abstract
Low‐frequency noise measurements on GaAlAs/GaAs Heterojunction Bipolar Transistors are reported Noise spectra exhibit excess noise composed of 1/f noise and several generation‐recombination (g‐r) levels. To try to localize and identify noise sources, results from various measurement modes and at different working temperatures are investigated.Keywords
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