Neutron transmutation doping of high-purity InP
- 1 August 1987
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (3) , 1129-1132
- https://doi.org/10.1063/1.339724
Abstract
Transmutation doping of high‐purity n‐type InP has been used to identify the photothermal ionization photoconductivity peaks due to Sn donors. The results obtained show that Sn and S donors in InP have the same ionization energy and the same ground‐state central cell shifts within a resolution of 0.006 meV.This publication has 8 references indexed in Scilit:
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