Metalorganic chemical vapour deposition of junction isolated GaAlAs/GaAs LED structures
- 1 September 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 77 (1-3) , 629-636
- https://doi.org/10.1016/0022-0248(86)90361-1
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- A study of p-type dopants for InP grown by adduct MOVPEJournal of Crystal Growth, 1984
- Mechanism of carbon incorporation in MOCVD GaAsJournal of Crystal Growth, 1984
- The growth of Magnesium-doped GaAs by the Om-Vpe processJournal of Electronic Materials, 1983
- Device quality epitaxial gallium arsenide grown by the metal alkyl-hydride techniqueJournal of Crystal Growth, 1975
- Properties of Epitaxial GaAs Layers from a Triethyl Gallium and Arsine SystemJournal of the Electrochemical Society, 1975
- Diffusion of Impurities in Semiconducting Substitutional Solid Solutions InAs1−ηPη and GaAs1−nPηPhysica Status Solidi (b), 1969
- The Alkyls of the Third Group Elements. I. Vapor Phase Studies of the Alkyls of Aluminum, Gallium and Indium1Journal of the American Chemical Society, 1941