Resonant Raman scattering in self-organized InAs/GaAs quantum dots
- 4 December 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (23) , 3746-3748
- https://doi.org/10.1063/1.1329321
Abstract
The exciton-phonon coupling in self-organized InAs/GaAs quantum dots (QDs) is investigated under resonant excitation of the ground-state transition. First- and second-order phonon sidebands of the TO (30.3 meV) and LO (33.2 meV) modes of the strained InAs QDs as well as an interface (35.9 meV) mode are resolved. Huang–Rhys factors of 0.012, 0.026, and 0.006, respectively, indicate enhanced polar exciton-phonon coupling in such strained low-symmetry QDs. Time-resolved measurements support the local character of the phonon modes.Keywords
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