Calculated Positron Annihilation Parameters for Defects in SiC

• 17 January 2001
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 353-356, 533-536
• https://doi.org/10.4028/www.scientific.net/msf.353-356.533

Abstract

Keywords

• DIVACANCY
• IRRADIATION
• MONOVACANCY
• POSITRON ANNIHILATION PARAMETERS