Vertical bipolar transistors in laser-recrystallized polysilicon

1 August 1985

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 6 (8) , 400-402
https://doi.org/10.1109/EDL.1985.26169

Abstract

Vertical bipolar n-p-n transistors with a base width of 0.2 µm have been fabricated in laser-recrystallized polysilicon films on thermally oxidized silicon substrates. With proper hydrogen annealing steps, common-emitter current gains on the order of 100 were possible. Recombination in the base-emitter space-charge region was found to be the dominant source of base current.

Keywords

BIPOLAR TRANSISTORS
ANNEALING
MOSFETS
LASER THEORY
GAS LASERS
LASER BEAMS
SEMICONDUCTOR FILMS
SILICON ON INSULATOR TECHNOLOGY
ETCHING
METALLIZATION