Crystal Growth of Silicon and Germanium in Metal Films
- 1 June 1973
- journal article
- other
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 180 (4089) , 948-949
- https://doi.org/10.1126/science.180.4089.948
Abstract
Amorphous silicon in contact with silver films and amorphous germanium in contact with aluminum films form crystalline precipitates when heated to temperatures well below those at which any liquid phase is present. Crystallization occurs by an initial dissolution of the semiconductor into the metal filmsolvent followed by the growth of crystals out of the solvent.Keywords
This publication has 6 references indexed in Scilit:
- Solid-phase epitaxial growth of Ge layersPhysica Status Solidi (a), 1972
- Microanalysis of Materials by Backscattering SpectrometryScience, 1972
- Formation of Injecting and Blocking Contacts on High-Resistivity GermaniumApplied Physics Letters, 1972
- Precipitation of Si from the Al Metallization of Integrated CircuitsApplied Physics Letters, 1972
- Crystal Growth in GelsPublished by Walter de Gruyter GmbH ,1971
- Specific Heat and Heat of Crystallization of Amorphous GermaniumJournal of Applied Physics, 1969