Light-Induced Metastable Defects in a-Si:H: Towards an Understanding
- 1 January 1985
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Effects of dopants and defects on light-induced metastable states ina-Si:HPhysical Review B, 1985
- Paramagnetic states in doped amorphous silicon and germaniumSolid State Communications, 1983
- Staebler-Wronski effects in hydrogenated amorphous Si1−xGexSolar Cells, 1983
- Doping and the Fermi Energy in Amorphous SiliconPhysical Review Letters, 1982
- Amorphous thin films for terrestrial solar cellsJournal of Vacuum Science and Technology, 1982
- Deep electron traps in hydrogenated amorphous siliconPhysical Review B, 1981
- Electronic and structural properties of plasma-deposited a-Si:O:H - The story of O2Journal of Non-Crystalline Solids, 1980
- Fatigue effect in luminescence of glow discharge amorphous silicon at low temperaturesSolid State Communications, 1980
- Electron spin resonance and hopping conductivity of a-SiOxJournal of Non-Crystalline Solids, 1979
- Handbook of Thin Film TechnologyJournal of the Electrochemical Society, 1971