Elemental boron and antimony doping of MBE Si and SiGe structures grown at temperatures below 600°C
- 1 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 907-911
- https://doi.org/10.1016/0022-0248(91)91105-j
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Annealing studies of highly doped boron superlatticesJournal of Applied Physics, 1989
- Growth and characterization of a delta-function doping layer in SiApplied Physics Letters, 1987
- The delta-doped field-effect transistor (δFET)IEEE Transactions on Electron Devices, 1986
- Potential‐Enhanced Doping of Si Grown by Molecular Beam EpitaxyJournal of the Electrochemical Society, 1985
- Enhanced sticking coefficients and improved profile control using boron and antimony as coevaporated dopants in Si–MBEJournal of Vacuum Science & Technology B, 1985
- Determination of strain distributions from X-ray Bragg reflexion by silicon single crystalsActa Crystallographica Section A, 1977