Fabrication of NMOS capacitors with a low-voltage coefficient at a silicon foundry
- 1 January 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 6 (1) , 54-56
- https://doi.org/10.1109/EDL.1985.26039
Abstract
The custom integrated circuit design technique pioneered by Mead and Conway [1] is often used for moderately complex digital systems. The fabrication is carried out at a "foundry" where a "standard" NMOS process is applied to the design. In this note, the Mead-Conway technique has been applied to analog circuits with the goal of producing a reasonable quality switched capacitor filter with as few process modifications as possible. Seven chip runs have been carried out at two separate foundries with good and consistent results.Keywords
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