Semiconductor interferometric laser
- 15 July 1982
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (2) , 112-114
- https://doi.org/10.1063/1.93444
Abstract
A novel semiconductor laser employing a cavity structure of the open ended Michelson interferometer is studied. The interference effect is used to select and stabilize the longitudinal mode of the laser. Experimental results showed that lasing action is observed only at the few coincident resonant modes that do not suffer any interference loss. Hence the operating wavelength is primarily determined by the cavity dimensions. The laser showed a change of 0.667 Å/ °C in its lasing wavelength with temperature, a considerable improvement over the conventional Fabry–Perot lasers.Keywords
This publication has 3 references indexed in Scilit:
- Components for optical communications systems: A reviewProceedings of the IEEE, 1980
- Potential broad-band servicesProceedings of the IEEE, 1980
- GaAs- (GaAl)As LOC-DBR laser with high differential quantum efficiencyApplied Physics Letters, 1978