Structure Evolution of Highly Crystallized BaWO4 Film Prepared by an Electrochemical Method at Room Temperature

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Abstract
Highly crystallized BaWO4 films have been prepared on a tungsten substrate in an alkaline solution containing barium ions by an electrochemical method with a constant direct current density of 1 mA/cm2 at room temperature (25°C). The average grain size was about 13 μm, and the thickness about 9 μm after a treatment time of 35 min. The dependence of cell voltage on deposition time was divided into three steps: conduction, anodic oxidation, and breakdown steps. The BaWO4 film formed during the first step. Electrochemical dissolution of metal tungsten occurred with an accompanying positive change of overpotential in the first step. The crystallization of BaWO4 was characterized by three‐dimensional nucleation. In the second step, an amorphous tungsten oxide film formed, thereby increasing the potential. An electrical breakdown occurred in the third step, and the breakdown voltage (about 90 V) was practically the same as those of anodic tungsten oxide films.