Effect of ambipolar diffusion on the hot-carrier relaxation in semiconductors
- 15 January 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 43 (3) , 2408-2411
- https://doi.org/10.1103/physrevb.43.2408
Abstract
The effect of the change in the carrier density due to ambipolar diffusion on the cooling of hot plasmas in semiconductors is investigated. It is shown that the diffusion contributes to a warm-up of the plasma.Keywords
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