Anomalous Residual Defects in Silicon after Annealing of Through-Oxide Phosphorus Implanted Samples
- 1 January 1977
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 16 (S1) , 47
- https://doi.org/10.7567/jjaps.16s1.47
Abstract
Formation conditions of "anomalous residual defects" (ARD) in through-oxide phosphorus implanted silicon are investigated. Defect formation is discussed in conjunction with the oxygen implanted samples and with the calculated recoil oxygen yield. The effects of ARD on junction characteristics are also investigated. Methods of effectively eliminating ARD are also proposed.Keywords
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