Temperature dependence of charge build-up mechanisms and breakdown phenomena in thin oxides under Fowler-Nordheim injection
- 1 July 1997
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 41 (7) , 1001-1004
- https://doi.org/10.1016/s0038-1101(97)00013-0
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- On the charge build-up mechanisms in gate dielectricsSolid-State Electronics, 1994
- Model for programming window degradation in FLOTOX EEPROM cellsIEEE Electron Device Letters, 1992
- Temperature acceleration of time-dependent dielectric breakdownIEEE Transactions on Electron Devices, 1989
- Determination of insulator bulk trapped charge densities and centroids from photocurrent-voltage charactersitcs of MOS structuresJournal of Applied Physics, 1976