Silicon Epitaxial Wafer with Abrupt Interface by Two‐Step Epitaxial Growth Technique

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Abstract
A new silicon epitaxial growth technique was developed to respond to the strong demand from higher frequency semiconductor devices. It includes a low temperature epitaxial growth technique by and a newly developed two‐step epitaxial growth technique based upon a hydrodynamic analysis of crystal growth from vapor phase considering a stagnant gas layer. Autodoping and autodilution phenomena are both completely suppressed and a controlled abrupt impurity profile can be obtained between two regions of different doping level. Silicon Read Type IMPATT diodes made by this technique demonstrated a remarkable improvement of microwave characteristics over the ones made by the conventional technique, thus verifying the usefulness of this new technique.

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