A flexible 3-inch fabrication line for InP-based HEMT and HBT MMIC production
- 22 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
We discuss the issues related to fabrication of InP based MMICs for government and commercial production applications. InP based MMICs offer unique advantages for many government systems which include lower noise figure, lower DC power consumption and higher linearity. Under the MAFET program, TRW is bringing both InP HEMT and InP HBT-based MMICs from a R&D state into production capability. Manufacturing issues will be addressed from a critical node point of view, where critical nodes are defined as those process steps with the greatest impact on the MMIC performance and yield.Keywords
This publication has 2 references indexed in Scilit:
- InP based HBT millimeter-wave technology and circuit performance to 40 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A high performance and low DC power V-band MMIC LNA using 0.1 mu m InGaAs/InAlAs/InP HEMT technologyIEEE Microwave and Guided Wave Letters, 1993