Ohmic contacts to p -type ZnSe using ZnTe/ZnSe multiquantum wells

13 May 1993

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 29 (10) , 878-879
https://doi.org/10.1049/el:19930586

Abstract

Employing p⁺-ZnTe/ZnSe quantum wells whose sub-bands are aligned in energy so that resonant tunnelling of holes can occur through the multiquantum well region, nonalloyed ohmic contacts to p-type ZnSe have been realised. A specific contact resistance as low as 5.0 × 10⁻² Ωcm² has been achieved for N-doped ZnSe with a hole concentration of 7.0 × 10¹⁶ cm⁻³.

Keywords

NONALLOYED OHMIC CONTACTS
SEMICONDUCTORS
MQW
P-TYPE ZNSE
N-DOPED ZNSE
CONTACT RESISTANCE
HOLE CONCENTRATION
MULTIQUANTUM WELLS
AU-PT-PD-ZNTE-ZNSE
RESONANT TUNNELLING
P+-ZNTE/ZNSE QUANTUM WELLS

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