InAs x P 1− x /InP photodiodes prepared by molecular-beam epitaxy
- 26 April 1984
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 20 (9) , 363-364
- https://doi.org/10.1049/el:19840249
Abstract
Photodiodes have been made in epitaxial layers of InAsxP1−x grown by molecular-beam epitaxy on InP substrates The As-P ratio of this material system can be adjusted to produce photodetectors for the 2–3 μm-wavelength region. Initial devices exhibit cutoff wavelengths as long as 2 μm.Keywords
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