Interaction and Migration Properties of Ion Beam Induced Point Defects in Crystalline Silicon: Basic Research and Technological Relevance
- 1 November 1997
- journal article
- Published by Trans Tech Publications, Ltd. in Defect and Diffusion Forum
- Vol. 153-155, 137-158
- https://doi.org/10.4028/www.scientific.net/ddf.153-155.137
Abstract
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