Electron cyclotron resonance etching characteristics of GaN in SiCl4/Ar

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Abstract
Electron cyclotron resonance (ECR) plasma etching characteristics of gallium nitride (GaN) are investigated using low pressure (4–10 mTorr) SiCl4/Ar ECR discharges. The purpose of this effort is to examine the dry etching processes of GaN that do not require hydrogen, which is known to cause carrier compensation in GaN. A maximum etching rate of 960 Å/min and good surface morphologies are obtained. The etch rate is found to increase near‐linearly with increasing dc bias, and a minimum dc bias of 100 V is required to initiate etching. Enhanced etching rates are obtained as the fraction of active chemical etchant species (SiCl4) in the discharge is increased. We have also found that the material quality significantly affects the etch rate. The latter decreases with x‐ray rocking curve half‐width and increases with defect density.

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