Step-free surface grown on GaAs (111)B substrate by selective area metalorganic vapor phase epitaxy
- 21 October 1996
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (17) , 2549-2550
- https://doi.org/10.1063/1.117735
Abstract
Selective metalorganic vapor phase epitaxy of GaAs within a finite area was investigated on (111)B substrate. The surface stoichiometry is determined based on surface photo-absorption measurement. High-temperature growth at 800 °C on stable GaAs (111)B and a cooling procedure with the (2×2)-like surface to improve flatness result in an intentionally step-free surface with device dimensions as wide as 8 μm on a selectively grown GaAs mesa.Keywords
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