Narrow bandwidth long wavelength resonant cavity photodiodes
- 25 November 1993
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 29 (24) , 2148-2149
- https://doi.org/10.1049/el:19931436
Abstract
Resonant cavity photodetectors at 1.53μm are demonstrated using the epitaxial liftoff technique to position an epilayer structure between two metallic mirrors. The epilayer consists of a pin structure with quantum wells placed strategically at the antinodes of the fabricated cavity. The quality factor of the 1.16μm long cavity is 59 corresponding to mirror reflectivies of 94 and 90%.Keywords
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